Reversible strain-induced magnetic part transition in a van der Waals magnet
Music, T. et al. Large tunneling magnetoresistance in spin-filter van der Waals heterostructures. Science 360, 1214–1218 (2018).
Klein, D. R. et al. Probing magnetism in 2D van der Waals crystalline insulators through electron tunneling. Science 360, 1218–1222 (2018).
Wang, Z. et al. Very giant tunneling magnetoresistance in layered magnetic semiconductor CrI3. Nat. Commun. 9, 2516 (2018).
Kim, H. H. et al. A million p.c tunnel magnetoresistance in a magnetic van der Waals heterostructure. Nano Lett. 18, 4885–4890 (2018).
Burch, Ok. S., Mandrus, D. & Park, J.-G. Magnetism in two-dimensional van der Waals supplies. Nature 563, 47–52 (2018).
Mak, Ok. F., Shan, J. & Ralph, D. C. Probing and controlling magnetic states in 2D layered magnetic supplies. Nat. Rev. Phys. 1, 646–661 (2019).
Li, T. et al. Strain-controlled interlayer magnetism in atomically skinny CrI3. Nat. Mater. 18, 1303–1308 (2019).
Music, T. et al. Switching 2D magnetic states through stress tuning of layer stacking. Nat. Mater. 18, 1298–1302 (2019).
Chu, J.-H. et al. In-plane resistivity anisotropy in an underdoped iron arsenide superconductor. Science 329, 824–826 (2010).
Hicks, C. W. et al. Sturdy enhance of Tc of Sr2RuO4 beneath each tensile and compressive pressure. Science 344, 283–285 (2014).
Chu, J.-H., Kuo, H.-H., Analytis, J. G. & Fisher, I. R. Divergent nematic susceptibility in an iron arsenide superconductor. Science 337, 710–712 (2012).
Mutch, J. et al. Proof for a strain-tuned topological part transition in ZrTe5. Sci. Adv. 5, eaav9771 (2019).
Ceballos, A. et al. Impact of pressure and thickness on the transition temperature of epitaxial FeRh thin-films. Appl. Phys. Lett. 111, 172401 (2017).
Haskel, D. et al. Strain tuning of the spin-orbit coupled floor state in Sr2IrO4. Phys. Rev. Lett. 109, 027204 (2012).
Hong, S. S. et al. Excessive tensile pressure states in La0.7Ca0.3MnO3 membranes. Science 368, 71–76 (2020).
Šiškins, M. et al. Magnetic and digital part transitions probed by nanomechanical resonators. Nat. Commun. 11, 2698 (2020).
Wang, Y. et al. Pressure-sensitive magnetization reversal of a van der Waals magnet. Adv. Mater. 32, 2004533 (2020).
Ni, Z. et al. Imaging the Néel vector switching within the monolayer antiferromagnet MnPSe3 with strain-controlled Ising order. Nat. Nanotechnol. 16, 782–787 (2021).
Pizzochero, M. & Yazyev, O. V. Inducing magnetic part transitions in monolayer CrI3 through lattice deformations. J. Phys. Chem. C 124, 7585–7590 (2020).
Wu, Z., Yu, J. & Yuan, S. Pressure-tunable magnetic and digital properties of monolayer CrI3. Phys. Chem. Chem. Phys. 21, 7750–7755 (2019).
Zhang, J.-M., Nie, Y.-Z., Wang, X.-G., Xia, Q.-L. & Guo, G.-H. Pressure modulation of magnetic properties of monolayer and bilayer FePS3 antiferromagnet. J. Magn. Magn. Mater. 525, 167687 (2021).
Xu, B. et al. Switching of the magnetic anisotropy through pressure in two dimensional multiferroic supplies: CrSX (X = Cl, Br, I). Appl. Phys. Lett. 116, 052403 (2020).
Hicks, C. W., Barber, M. E., Edkins, S. D., Brodsky, D. O. & Mackenzie, A. P. Piezoelectric-based equipment for pressure tuning. Rev. Sci. Instrum. 85, 065003 (2014).
Wilson, N. P. et al. Interlayer digital coupling on demand in a 2D magnetic semiconductor. Nat. Mater. 20, 1657–1662 (2021).
Lee, Ok. et al. Magnetic order and symmetry within the 2D semiconductor CrSBr. Nano Lett. 21, 3511–3517 (2020).
Telford, E. J. et al. Layered antiferromagnetism induces giant unfavourable magnetoresistance within the van der Waals semiconductor CrSBr. Adv. Mater. 32, 2003240 (2020).
Wang, L. et al. In situ pressure tuning in hBN-encapsulated graphene digital units. Nano Lett. 19, 4097–4102 (2019).
Levy, N. et al. Pressure-induced pseudo-magnetic fields better than 300 Tesla in graphene nanobubbles. Science 329, 544–547 (2010).
Mao, J. et al. Proof of flat bands and correlated states in buckled graphene superlattices. Nature 584, 215–220 (2020).
Pető, J. et al. Reasonable pressure induced oblique bandgap and conduction electrons in MoS2 single layers. npj 2D Mater. Appl. 3, 39 (2019).
Conley, H. J. et al. Bandgap engineering of strained monolayer and bilayer MoS2. Nano Lett. 13, 3626–3630 (2013).
He, Ok., Poole, C., Mak, Ok. F. & Shan, J. Experimental demonstration of steady digital construction tuning through pressure in atomically skinny MoS2. Nano Lett. 13, 2931–2936 (2013).
Lee, J., Wang, Z., Xie, H., Mak, Ok. F. & Shan, J. Valley magnetoelectricity in single-layer MoS2. Nat. Mater. 16, 887–891 (2017).
Andrei, E. Y. et al. The marvels of moiré supplies. Nat. Rev. Mater. 6, 201–206 (2021).
Hopcroft, M. A., Nix, W. D. & Kenny, T. W. What’s the Younger’s modulus of silicon? J. Microelectromech. Syst. 19, 229–238 (2010).
Ureña, F., Olsen, S. H. & Raskin, J.-P. Raman measurements of uniaxial pressure in silicon nanostructures. J. Appl. Phys. 114, 144507 (2013).
Mohr, M., Papagelis, Ok., Maultzsch, J. & Thomsen, C. Two-dimensional digital and vibrational band construction of uniaxially strained graphene from ab initio calculations. Phys. Rev. B 80, 205410 (2009).
Huang, B. et al. Layer-dependent ferromagnetism in a van der Waals crystal right down to the monolayer restrict. Nature 546, 270–273 (2017).
Giannozzi, P. et al. QUANTUM ESPRESSO: a modular and open-source software program undertaking for quantum simulations of supplies. J. Phys. Condens. Matter 21, 395502 (2009).
Hamann, D. R. Optimized norm-conserving Vanderbilt pseudopotentials. Phys. Rev. B 88, 085117 (2013).
Grimme, S. Semiempirical GGA-type density useful constructed with a long-range dispersion correction. J. Comput. Chem. 27, 1787–1799 (2006).
